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| K4C561638C-TCD4000 Datasheet, PDF (16/42 Pages) Samsung semiconductor – 256Mb Network-DRAM | |||
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K4C5608/1638C
256Mb Network-DRAM
Read Timing (Burst Length = 4)
tCH
tCL
tCK
CK
CK
Input
(Control &
Addresses)
tIS tIH
LAL
(after RDA)
tIPW
CAS latency = 3
tQSLZ
DQS
(Output)
High-Z
DQ
(Output)
High-Z
CAS latency = 4
DQS
(Output)
High-Z
DQ
(Output)
High-Z
tQSPRE
Preamble
tLZ
tCKQS
tCKQS
tQSP
tCKQS
tQSP
tQSHZ
High-Z
tQSQ
tQSQV
tQSQ
tQSQV
Q0 Q1 Q2
Postamble
tQSQ
Q3
tHZ
High-Z
tAC
tQSLZ
tAC
tAC
tQSPRE
tCKQS
tCKQS
tOH
tQSP
tCKQS
tQSP
tQSHZ
Preamble
tLZ
tQSQ
tQSQV
tQSQ
tQSQV
Q0 Q1 Q2
Postamble
tQSQ
tHZ
Q3
tAC
tAC
tAC
tOH
Note : The correspondence of LDQS, UDQS to DQ. (K4C561638C-TC)
LDQS
DQ0 to 7
UDQS
DQ8 to 15
- 16 -
REV. 0.7 Aug. 2003
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