K4C561638C-TCD4000 Datasheet, PDF (28/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
256Mb Network-DRAM
Multiple Bank Read Timing (CL = 3)
0
1
2
3
4
5
6
7
8
9
10
11
CK
CK
I_RC = 5 cycles
I_RBD = 2 cycles I_RCD = 1 cycle
I_RCD = 1 cycle
Command
RDAa LALa RDAb LALb DESL RDAa LALa RDAc LALc RDAd LALd RDAb
I_RCD = 1 cycle
I_RAS = 4 cycles
Bank Add.
(BA0, BA1)
Bank"a"
X Bank"b"
X
BL = 2
I_RBD = 2 cycles
DQS ^Hi-Z
(Output)
CL = 3
DQ
Hi-Z
(Output)
BL = 4
Hi-Z
DQS
(Output)
CL = 3
DQ
Hi-Z
(Output)
I_RCD = 1 cycle
Bank"a" X
I_RBD = 2 cycles
I_RBD = 2 cycles
Bank"c" X Bank"d" X Bank"b"
Hi-Z
CL = 3
Qa0 Qa1 ^Hi-Z Qb0 Qb1
Hi-Z
CL = 3
Qa0 Qa1 ^Hi-Z Qc0
CL = 3
CL = 3
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3 ^Hi-Z
Qa0 Qa1 Qa2 Qa3 Qc0
Multiple Bank Read Timing (CL = 4)
0
1
2
3
4
5
6
7
8
9
10
11
CK
CK
I_RC = 5 cycles
I_RBD = 2 cycles I_RCD = 1 cycle
I_RCD = 1 cycle
Command
RDAa LALa RDAb LALb DESL RDAa LALa RDAc LALc RDAd LALd RDAb
I_RCD = 1 cycle
I_RAS = 4 cycles
Bank Add.
(BA0, BA1)
Bank"a"
X Bank"b"
BL = 2
I_RBD = 2 cycles
DQS ^Hi-Z
(Output)
X
CL = 4
DQ
Hi-Z
(Output)
BL = 4
Hi-Z
DQS
(Output)
CL = 4
DQ
Hi-Z
(Output)
I_RCD =1 cycle
I_RBD = 2 cycles
I_RBD = 2 cycles
Bank"a" X Bank"c" X Bank"d" X Bank"b"
Hi-Z
CL = 4
Qa0 Qa1 ^Hi-Z Qb0 Qb1
Hi-Z
CL = 4
Qa0 Qa1 ^Hi-Z
CL = 4
CL = 4
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3 ^Hi-Z
Qa0 Qa1 Qa2
Note : "X" is don’t care. I_RC to the same bank must be satisfied.
- 28 -
REV. 0.7 Aug. 2003