R01DS0190EJ0100 Datasheet, PDF (98/110 Pages) Renesas Technology Corp – 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 128 Kbytes of flash memory

RX111 Group
5. Electrical Characteristics
5.10 ROM (Flash Memory for Code Storage) Characteristics
Table 5.46 ROM (Flash Memory for Code Storage) Characteristics (1)
Item
Reprogramming/erasure cycle*¹
Data hold time
After 1000 times of N_PEC
Symbol
N_PEC
t_DRP
Min.
1000
20*^2, *³
Typ.
Max.
Unit
Conditions
—
—
Times
—
—
Year Ta = +85°C
Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/
erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 4-byte programming is
performed 256 times for different addresses in 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is
counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is
prohibited).
Note 2. Characteristic when using the flash memory programmer and the self-programming library provided from Renesas Electronics.
Note 3. This result is obtained from reliability testing.
Table 5.47 ROM (Flash Memory for Code Storage) Characteristics (2)
: high-speed operating mode, middle-speed operating mode
Conditions: VCC = AVCC0 = 2.7 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +105°C
Item
Programming time
Erasure time
Blank check time
4-byte
1-Kbyte
4-byte
1-Kbyte
Symbol
t_P4
t_E1K
t_BC4
t_BC1K
FCLK = 1 MHz
Min.
Typ.
—
1650
—
9.77
—
—
—
—
Max.
4910
329
5000
1280
FCLK = 32 MHz
Unit
Min.
Typ. Max.
—
100
761
μs
—
5.53
258
ms
—
—
316
μs
—
—
80.7 ms
Note: • Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note: • The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: • The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
Table 5.48 ROM (Flash Memory for Code Storage) Characteristics (3)
: middle-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +105°C
FCLK = 1 MHz
FCLK = 8 MHz
Item
Symbol
Unit
Min.
Typ. Max.
Min.
Typ.
Max.
Programming time
4-byte
t_P4
—
1690 5380
—
290
1680
μs
Erasure time
Blank check time
1-Kbyte
4-byte
t_E1K
—
9.84
331
—
6.04
t_BC4
—
—
4980
—
—
275
ms
973
μs
1-Kbyte
t_BC1K
—
—
1270
—
—
250
ms
Note: • Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note: • The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: • The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
R01DS0190EJ0100 Rev.1.00
Jun 19, 2013
Page 98 of 107