M32C82_15 Datasheet, PDF (58/84 Pages) Renesas Technology Corp – SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER

M32C/82 Group
5. Electrical Characteristics (VCC = 5V)
Memory expansion mode and microprocessor mode
(with a wait state, when accessing an external memory and using the multiplexed bus)
Read timing
Vcc=5V
BCLK
ALE
18ns.max
td(BCLK-ALE)
th(BCLK-ALE)
-2ns.min
td(BCLK-CS)
tcyc
18ns.max
CSi
td(AD-ALE)⁽¹⁾
th(ALE-AD)⁽¹⁾
th(RD-CS)⁽¹⁾
th(BCLK-CS)
-3ns.min
ADi
/DBi
ADi
BHE
Address
td(BCLK-AD)
18ns.max
tac3(AD-DB)⁽¹⁾
tdz(RD-AD)
8ns.max
tac3(RD-DB)⁽¹⁾
Data input
tsu(DB-BCLK)
26ns.min
Address
th(RD-DB)
0ns.min _th(BCLK-AD)
-3ns.min
td(BCLK-RD)
18ns.max
th(BCLK-RD)
-5ns.min
th(RD-AD)⁽¹⁾
RD
NOTES:
1. It varies with the operation frequency.
td(AD-ALE)=(tcyc/2-20)ns.min
th(ALE-AD)=(tcyc/2-10)ns.min, th(RD-AD)=(tcyc/2-10)ns.min, th(RD-CS)=(tcyc/2-10)ns.min
tac3(RD-DB)=(tcyc/2 x m-35)ns.max (m=3 with 2 wait states and m=5 with 3 wait states)
tac3(AD-DB)=(tcyc/2 x n-35)ns.max (n=5 with 2 wait states and n=7 with 3 wait states)
Write timing (written in 2 cycles with no wait state)
BCLK
ALE
18ns.max
td(BCLK-ALE)
th(BCLK-ALE)
-2ns.min
td(BCLK-CS)
tcyc
18ns.max
CSi
td(AD-ALE)⁽¹⁾
th(ALE-AD)⁽¹⁾
th(WR-CS)⁽¹⁾
th(BCLK-CS)
-3ns.min
ADi
/DBi
ADi
BHE
WR,WRL,
WRH
Address
td(BCLK-AD)
18ns.max
Data output
td(DB-WR)⁽¹⁾
Address
th(WR-DB)⁽¹⁾
th(BCLK-AD)
-3ns.min
td(BCLK-WR)
18ns.max
th(BCLK-WR)
-3ns.min
th(WR-AD)⁽¹⁾
NOTES:
1. It varies with the operation frequency.
td(AD-ALE)=(tcyc/2-20)ns.min
th(ALE-AD)=(tcyc/2-10)ns.min, th(WR-AD)=(tcyc/2-10)ns.min
th(WR-CS)=(tcyc/2-10)ns.min, th(WR-DB)=(tcyc/2-10)ns.min
td(DB-WR)=(tcyc/2 x m-25)ns.min
Measurement conditions
• VCC=4.2 to 5.5V
• Input high and low voltage:
VIH=2.5V, VIL=0.8V
• Output high and low voltage:
VOH=2.0V, VOL=0.8V
Figure 5.4 VCC=5V Timing Diagram (3)
Rev.1.20 Jun. 01, 2004 page 56 of 80