HD64F3694FXV Datasheet, PDF (360/452 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 21 Electrical Characteristics
21.2.6 Flash Memory Characteristics
Table 21.8 Flash Memory Characteristics
V_CC = 3.0 to 5.5 V, V_SS = 0.0 V, T_a = –20 to +75°C, unless otherwise indicated.
Item
Test
Symbol Condition
Programming time (per 128 bytes)*¹*²*⁴
t_P
Erase time (per block) *¹*³*⁶
t_E
Reprogramming count
N_WEC
Programming Wait time after SWE
x
bit setting*¹
Wait time after PSU
y
bit setting*¹
Wait time after P bit setting z1
1≤n≤6
*¹*⁴
z2
7 ≤ n ≤ 1000
z3
Additional-
programming
Wait time after P bit clear*¹ α
Wait time after PSU
β
bit clear*¹
Wait time after PV
γ
bit setting*¹
Wait time after
ε
dummy write*¹
Wait time after PV bit clear*¹ η
Wait time after SWE
θ
bit clear*¹
Maximum programming
N
count *¹*⁴*⁵
Min
—
—
1000
1
50
28
198
8
5
5
4
2
2
100
—
Values
Typ Max
7
200
100 1200
10000 —
—
—
—
—
30
32
200 202
10
12
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev.5.00 Nov. 02, 2005 Page 330 of 418
REJ09B0028-0500