4559 Datasheet, PDF (144/148 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

4559 Group
Table 34 Electrical characteristics 2 (Ta = –20 °C to 85 °C, VDD = 1.8 to 5.5 V, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Unit
Min. Typ. Max.
IDD
Supply current
at active mode
VDD = 5V
f(STCK) = f(XIN)/8
(with a ceramic oscillator)
(1, 2)
f(XIN) = 6MHz
f(RING) = stop
f(XCIN) = stop
f(STCK) = f(XIN)/4
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
1.2 2.4 mA
1.3 2.6
1.6 3.2
2.2 4.4
VDD = 5V
f(XIN) = 4MHz
f(RING) = stop
f(XCIN) = stop
f(STCK) = f(XIN)/8
f(STCK) = f(XIN)/4
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
0.9 1.8 mA
1
2
1.2 2.4
1.6 3.2
VDD = 3V
f(XIN) = 4MHz
f(RING) = stop
f(XCIN) = stop
f(STCK) = f(XIN)/8
f(STCK) = f(XIN)/4
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
0.3 0.6 mA
0.4 0.8
0.5 1
0.7 1.4
at active mode
(with a quartz-crystal
oscillator)^{(1, 2)}
VDD = 5V
f(XIN) = stop
f(RING) = stop
f(XCIN) = 32 kHz
f(STCK) = f(XCIN)/8
f(STCK) = f(XCIN)/4
f(STCK) = f(XCIN)/2
f(STCK) = f(XCIN)
7 14 µA
8 16
10 20
14 28
VDD = 3V
f(XIN) = stop
f(RING) = stop
f(XCIN) = 32 kHz
f(STCK) = f(XCIN)/8
f(STCK) = f(XCIN)/4
f(STCK) = f(XCIN)/2
f(STCK) = f(XCIN)
5 10 µA
6 12
7 14
8 16
at active mode
(with an on-chip oscillator)
(1, 2)
VDD = 5V
f(XIN) = stop
f(RING) = active
f(XCIN) = stop
f(STCK) = f(RING)/8
f(STCK) = f(RING)/4
f(STCK) = f(RING)/2
f(STCK) = f(RING)
50 100 µA
60 120
80 160
120 240
VDD = 3V
f(XIN) = stop
f(RING) = active
f(XCIN) = stop
f(STCK) = f(RING)/8
f(STCK) = f(RING)/4
f(STCK) = f(RING)/2
f(STCK) = f(RING)
10 20 µA
13 26
19 38
31 62
at clock operation mode
(POF instruction
execution)^{(1, 2)}
f(XCIN) = 32 kHz VDD = 5V
VDD = 3V
6 12 µA
5 10
at RAM back-up mode
(POF2 instruction
execution)⁽¹⁾
Ta = 25°C
VDD = 5V
VDD = 3V
0.1 3 µA
10
6
Note 1. The voltage drop detection circuit operation current (IRST) is added.
Note 2. When the internal dividing resistors for LCD power are used, the current values according to using resistor values are added.
Rev.1.04 Aug 23, 2007 Page 144 of 146
REJ03B0188-0104