HYB18T256161BF Datasheet, PDF (4/40 Pages) Qimonda AG – 256-Mbit x16 DDR2 SDRAM

Internet Data Sheet
HYB18T256161BF–20/25/28
256-Mbit Double-Data-Rate-Two SDRAM
1.2
Description
The 256-Mb DDR2 DRAM is a high-speed Double-Data-Rate-Two CMOS Synchronous DRAM device containing 268,435,456
bits and internally configured as a quad bank DRAM. The 256-Mb device is organized as 4 Mbit × 16 I/O × 4 banks chip. These
synchronous devices achieve high speed transfer rates starting at 700 Mb/sec/pin for general applications.
The device is designed to comply with all DDR2 DRAM key features:
1. posted CAS with additive latency,
2. write latency = read latency - 1,
3. normal and weak strength data-output driver,
4. Off-Chip Driver (OCD) impedance adjustment
5. On-Die Termination (ODT) function.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched
at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or
differential DQS-DQS pair in a source synchronous fashion.
A 15-bit address bus is used to convey row, column and bank address information in a RAS-CAS multiplexing style.
An Auto-Refresh and Self-Refresh mode is provided along with various power-saving power-down modes.
The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.
The DDR2 SDRAM is available in P-TFBGA package.
Rev. 1.20, 2007-06
4
11232006-QP6X-6EM0