English
Language : 

HYB18T256161BF Datasheet, PDF (23/40 Pages) Qimonda AG – 256-Mbit x16 DDR2 SDRAM
Internet Data Sheet
HYB18T256161BF–20/25/28
256-Mbit Double-Data-Rate-Two SDRAM
5.4
Output Buffer Characteristics
Voltage (V)
TABLE 23
Full Strength Calibrated Pull-up Driver Characteristics
Calibrated Pull-up Driver Current [mA]
Nominal Minimum1) Nominal
Nominal(18
(21 Ohms)
Low2)(18.75 Ohms) ohms)3)
Nominal
High2)(17.25
Ohms)
Nominal
Maximum4) (15
Ohms)
0.2
–9.5
–10.7
–11.4
–11.8
–13.3
0.3
–14.3
–16.0
–16.5
–17.4
–20.0
0.4
–18.3
–21.0
–21.2
–23.0
–27.0
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (TCASE). VDDQ = 1.7 V, any process
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (TCASE), VDDQ = 1.8 V, any process
3) The driver characteristics evaluation conditions are Nominal 25 °C (TCASE), VDDQ = 1.8 V, typical process
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (TCASE), VDDQ = 1.9 V, any process
Voltage (V)
TABLE 24
Full Strength Calibrated Pull-down Driver Characteristics
Calibrated Pull-down Driver Current [mA]
Nominal Minimum1)
(21 Ohms)
Nominal
Low2)(18.75
Ohms)
Nominal3)(18
ohms)
Nominal
High2)(17.25
Ohms)
Nominal
Maximum4) (15
Ohms)
0.2
9.5
10.7
11.5
11.8
13.3
0.3
14.3
16.0
16.6
17.4
20.0
0.4
18.7
21.0
21.6
23.0
27.0
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (TCASE). VDDQ = 1.7 V, any process
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (TCASE), VDDQ = 1.8V, any process
3) The driver characteristics evaluation conditions are Nominal 25 °C (TCASE), VDDQ = 1.8 V, typical process
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (TCASE), VDDQ = 1.9 V, any process
Rev. 1.20, 2007-06
23
11232006-QP6X-6EM0