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SAA8200HL Datasheet, PDF (60/71 Pages) NXP Semiconductors – Ensation Base integrated wireless audio baseband
Philips Semiconductors
SAA8200HL
Ensation Base integrated wireless audio baseband
Table 30: DC-to-DC converter characteristics …continued
Symbol
Parameter
Conditions
Ring oscillator
IDDA
current consumption
fOSC
oscillator output frequency
Table 31: SRI characteristics
Symbol
Parameter
Conditions
LVDS buffer
Static
IDDA
IDDA(pd)
CL
RO
supply current
power-down supply current
load capacitor
output voltage as ratio of the digital
supply voltage
VI(det)
Dynamic
input voltage required for detection
fclk(max)
maximum clock frequency
Table 32: Timing characteristics
Symbol
Parameter
Conditions
Crystal oscillator
Static
Ci(XTALH_IN)
parasitic input capacitance pin
XTALH_IN
Ri(XTALH_IN)
parasitic input resistance pin
XTALH_IN
fi = 12 MHz
Pdrive
Dynamic
crystal level of driver power
fosc
oscillator frequency
αcl
duty cycle
tsu
start-up time
Serial interface input and output data timing; see Figure 25
fBCK
Tcy(BCK)
bit clock frequency
bit clock cycle time
Tcy(s) is sample
frequency cycle
time
tBCKH
tBCKL
tr
tf
tsu(WS)
th(WS)
tsu(I2SIN)
th(I2SIN)
bit clock HIGH time
bit clock LOW time
rise time
fall time
word select setup time
word select hold time
data input setup time
data input hold time
SAA8200HL_2
Preliminary data sheet
Rev. 02 — 17 October 2005
Min
Typ
Max
Unit
-
-
100
µA
-
12
-
MHz
Min
Typ
Max
Unit
-
150
-
µA
-
-
1
µA
-
-
5
pF
-
0.25
-
-
100
-
mV
-
-
1
MHz
Min
Typ Max
Unit
<tbd>
<tbd>
100
-
-
-
-
-
<tbd> <tbd> pF
<tbd> <tbd> Ω
-
500
µW
12
-
50
-
500 -
MHz
%
ms
-
128fs
Hz
-
1⁄128Tcy(s) s
30
-
-
ns
30
-
-
ns
-
-
20
ns
-
-
20
ns
10
-
-
ns
10
-
-
ns
10
-
-
ns
10
-
-
ns
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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