MN63Y1208 Datasheet, PDF(98/120 Page) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

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MN63Y1208 Datasheet, PDF (98/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

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Chapter 7 Tunnel Mode

Â Data field

Field

CLA

0x00

Setting

INS

Data

0xD6

Start address of data to be written

x See 4.3.8.5 Address.

Start address of data to be written

x See 4.3.8.5 Address.

Byte length of Data block

Setting range: 0x01(1) to 0xF8(248)

x Set to 16Ãn (n: integer) for encrypted

communication.

Write data

x See 4.3.8.6 Data.

2. QUERY Command (Host to RFID)

z Format

Command code

1 byte

z Data field

Field

Command code

0x28

Setting

3. QUERY Response (RFID to Host)

z Format

Response code

1 byte

Start address

2 bytes

Data length n

1 byte

z Data field

Field

Response code

Start address

Setting

See 5.2.4 Status.

Address at which to start writes

Data length n

Data

Size of data to be written

Data to be written to the host

Remarks

Responds with an error,

except 0x00

Maximum n = 15 for encrypted

communication

Remarks

Data

n bytes

Remarks

x Byte units

x Big endian format

Byte units

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