MN63Y1208 Datasheet, PDF (107/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

Chapter 8 Electric Characteristics
Input capacitance
V_SS = 0 V
Limits
Item
Symbol
Condition
Unit
Min Typ Max
Capacitance between
Ta=25 °C
C20 antenna terminals
C_{I 13.56 MHz, amplitude}
13.5 15.5 17.5 pF
(VA-VB)
1V(RMS) with bias of 2V
Load switch
Item
C22
Load switch
resistance
Symbol
Condition
VA-VB
R_LD
Ta = -20 °C
Limits
Min Typ
85 °C, V_SS = 0 V
Unit
Max
90
150 210
107