MN63Y1208 Datasheet, PDF(110/120 Page) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

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MN63Y1208 Datasheet, PDF (110/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

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Chapter 8 Electric Characteristics

8.6 Boot of power supply

Ta = -20 Â°C 85 Â°C, VSS = 0 V

Item

Symbol

Condition

Limits

Unit

Min Typ Max

VDDEX boot time to be

E1 ready to receive

command

Note 6)

tBOOT

-

-

3

ms

E2

VDDEX low pulse

period

Note 6)

tPLW

3

-

-

ms

Note ) VDDEX-VSS decoupling capacitor is 0.1 ÂµF and VDDD-VSS decoupling capacitor is 0.1 ÂµF.

Note ) Host access enable after TBOOT time passed on Power up.

Host access is finished before Power down.

Fig.3

110

▷