MN63Y1208 Datasheet, PDF (103/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

Chapter 8 Electric Characteristics
8.2 Absolute Maximum Ratings
Note 1)
V_SS = 0 V
Item
Symbol
Rating
Unit
A1
V_DDEX
- 0.3 + 4.6
V
A2 Power supply
Note 2)
V_DDA
- 0.3 + 4.6
V
A3
V_DDD
- 0.3 + 2.5
V
A4
Voltage between antenna terminals
(VA-VB, Peak to peak)
V_CBA
30
V
A5 Input pin voltage (SDA,SCL,NIRQ)
V_I
- 0.3 + 4.6
V
A6 Output current
I_O
12
mA
A7 Storage temperature Note 3)
T_stg
-40 85
°C
A8 Operating ambient temperature
T_opr
-20 85
°C
Note 1) Absolute Maximum Ratings are limit values not to destroy the chip and are not to
guarantee operation.
Note 2) VDDA, VDDD are generated internally and are not supplied externally.
Note 3) For precautions about FeRAM data retention, see the section of "F. Non-volatile
Memory Characteristics" on page 110.
Notation for usage
1.Decoupling capacitor should be connected between VDDEX and VSS, at as a short
distance as possible.
2.Decoupling capacitor should be connected between VDDA and VSS, and
Between VDDD and VSS, respectively at as a short distance as possible.
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