MN63Y1208 Datasheet, PDF (106/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

Chapter 8 Electric Characteristics
I/O terminal characteristics
Item
Symbol
Input terminal TEST
Condition
Ta = -20 °C
Limits
Min Typ
85 °C, V_SS = 0 V
Unit
Max
C10 Input voltage low level V_IL1
C11 Input leakage current I_LK1
Input/Output terminal SDA SCL
Fixed to low
0
- 0.3 V_DDEX V
10 0.02
10 µA
C12
Input voltage high
level
V_IH2
0.7 V_DDEX -
V_DDEX
V
C13 Input voltage low level V_IL2
0
- 0.3 V_DDEX V
C14 Input leakage current
C15
Output voltage low
level (SDA)
Output terminal NIRQ
I_LK2
I_LK2 ^{VDDD=1.8 V, IOL=4.0 mA}
10 0.02
10 µA
-
-
0.4
V
C16
Output leakage
current
I_LK3
10 0.02
10 µA
C17
Output voltage low
level
V_OL3 ^{VDDD=1.8 V, IOL=4.0 mA}
-
-
0.4
V
Reference information
As a reference of pull-up resistor connected to the open-drain type terminals,
SDA, SCL and NIRQ, 3.3Kohm resistors are used in our evaluation. Please adjust the
resistance value considering the communication speed, capacitive loads and other factors.
106