MN63Y1208 Datasheet, PDF (104/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

Chapter 8 Electric Characteristics
8.3 Operating Conditions
Item
Symbol
Conditions
B1 Supply voltage VDDEX V_DDEX
Reference
Item
Symbol
Conditions
B2 VDDA voltage
B3 VDDD voltage
V_DDA
V_DDD
Ta = -20 °C 85 °C, V_SS = 0 V
Limits
Unit
Min Typ Max
1.7
3.3
3.6
V
Ta = -20 °C
Limits
Min Typ
1.65 1.8
1.65 1.8
85 °C, V_SS = 0 V
Unit
Max
3.6 V
1.95 V
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