MN63Y1208 Datasheet, PDF (111/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

Chapter 8 Electric Characteristics
8.7 Non-volatile memory characteristics
Item
Condition
Minimum limit
Unit
F1 Read/Write cycle
Ta = -20 °C 85 °C
10⁸
Cycle
F2 Data retention
Ta = -20 °C 85 °C
10
Year
Note) It is recommended that a data write to FeRAM be performed after reflow soldering.
(Otherwise, due to very high temperature in reflow soldering, FeRAM data retention is
not guaranteed.)
Note) When removing the LSI from the board while its built-in FeRAM retains data,
do it at as low a temperature and for as short a time as possible.
However, for the removed LSI, FeRAM data retention is not guaranteed.
Note) Although outside the scope guarantee,
in LSI after mounting board, as far as possible, if necessary, be removed from the board
while holding the data of FeRAM, please remove low temperature and in a short time.
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