MN63Y1208 Datasheet, PDF (109/120 Pages) Panasonic Semiconductor – Built-in 4-Kbit FeRAM non-volatile memory with fast write and low power consumption

Chapter 8 Electric Characteristics
RF interface
Item
Symbol
Condition
Ta = -20 °C
Limits
Min Typ
85 °C, V_SS = 0 V
Unit
Max
VB voltage (peak to
peak) at “RF High”
D10 _period
without VDD2 supply
RF 13.56 MHz
V_RFH1
4.5
-
21
V
VB voltage (peak to
peak) at “RF High”
D11 _period
with VDD2 supply
RF 13.56 MHz
V_RFH2
3.5
-
21
V
D12
Modulation index of
command
JISX6319-4 RF
interface specification
m
4.0
-
14
%
Communication rate of
212kbps
Note ) This specification is applied both when receiving command and when transmitting response.
RF
Waveform
a
(V_RFH^a_*)
b
RF=High
RF=Low
RF=High
Modulation _{m =} ^{a − b}
Factor
a+b
The RF waveform is measured with
a calibration coil specified in ISO/IEC 10373-6.
Fig.2
109