MT40A1G8WE-083E Datasheet, PDF (315/358 Pages) Micron Technology – Automotive DDR4 SDRAM

8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Table 142: I_DD4Wc Measurement – Loop Pattern¹
Data⁴
0
0
WR 0 1 1 0 0 1 0 0 0 0 0 0 0 0 D0 = 00, D1 = FF,
1, 2
D, D 1 0 0 0 0 1 0 0 0 0 0 0 0 0 ^{D2 = FF, D3 = 00,}
3, 4
D_n, 1 1 1 1 0 1 3 3 0 0 0 7 F 0 ^{D4 = FF, D5 = 00,}
D_n
D8 = CRC
1
5
WR 0 1 1 0 0 1 1 1 0 0 0 7 F 0 D0 = FF, D1 = 00,
6, 7
D, D 1 0 0 0 0 1 0 0 0 0 0 0 0 0 ^{D2 = 00, D3 = FF,}
8, 9
D_n, 1
1
1
1
0
1
3
3
0
0
0
7
F
0
D4 = 00, D5 = FF,
D5 = FF, D7 = 00
D_n
D8 = CRC
2 10–14
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3 15–19
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4 20–24
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5 25–29
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
6 30–34
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7 35–39
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
8 40–44
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead ⁴
9 45–49
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead ⁴
10 50–54
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead ⁴
11 55–59
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead ⁴
12 60–64
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead ⁴
13 65–69
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead ⁴
14 70–74
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead ⁴
15 75–79
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead ⁴
Notes:
1. Pattern provided for reference only.
2. DQS_t, DQS_c are V_DDQ when not toggling.
3. BG1 is a "Don't Care" for x16 devices.
4. Burst sequence driven on each DQ signal by WRITE command. Outside burst operation,
DQ signals are V_DDQ.
5. For x4 and x8 only.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN
315
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