PIC18F452-IPT Datasheet, PDF (265/332 Pages) Microchip Technology – High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D

PIC18FXX2
22.1 DC Characteristics: PIC18FXX2 (Industrial, Extended)
PIC18LFXX2 (Industrial) (Continued)
PIC18LFXX2
(Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
PIC18FXX2
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Symbol
Characteristic
Min Typ Max Units
Conditions
IDD
Supply Current^(2,4) (Continued)
D010C
PIC18LFXX2
—
EC, ECIO osc configurations
10 25 mA VDD = 4.2V, -40°C to +85°C
D010C
PIC18FXX2
—
EC, ECIO osc configurations
10 25 mA VDD = 4.2V, -40°C to +125°C
D013
PIC18LFXX2
—
—
—
HS osc configuration
.6 2 mA FOSC = 4 MHz, VDD = 2.0V
10 15 mA FOSC = 25 MHz, VDD = 5.5V
HS + PLL osc configurations
15 25 mA FOSC = 10 MHz, VDD = 5.5V
D013
PIC18FXX2
—
—
HS osc configuration
10 15 mA FOSC = 25 MHz, VDD = 5.5V
HS + PLL osc configurations
15 25 mA FOSC = 10 MHz, VDD = 5.5V
D014
PIC18LFXX2
—
Timer1 osc configuration
15 55 μA FOSC = 32 kHz, VDD = 2.0V
D014
PIC18FXX2
—
—
Timer1 osc configuration
— 200 μA FOSC = 32 kHz, VDD = 4.2V, -40°C to +85°C
— 250 μA FOSC = 32 kHz, VDD = 4.2V, -40°C to +125°C
IPD
Power-down Current⁽³⁾
D020
PIC18LFXX2 ^—
—
—
.08 .9 μA VDD = 2.0V, +25°C
.1 4 μA VDD = 2.0V, -40°C to +85°C
3 10 μA VDD = 4.2V, -40°C to +85°C
D020
D021B
PIC18FXX2 —
—
—
.1 .9 μA VDD = 4.2V, +25°C
3 10 μA VDD = 4.2V, -40°C to +85°C
15 25 μA VDD = 4.2V, -40°C to +125°C
Legend: Shading of rows is to assist in readability of the table.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode, or during a device RESET, without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an
impact on the current consumption.
The test conditions for all IDD measurements in active Operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS, and all
features that add delta current disabled (such as WDT, Timer1 Oscillator, BOR,...).
4: For RC osc configuration, current through REXT is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2REXT (mA) with REXT in kOhm.
5: The LVD and BOR modules share a large portion of circuitry. The ΔIBOR and ΔILVD currents are not additive.
Once one of these modules is enabled, the other may also be enabled without further penalty.
© 2006 Microchip Technology Inc.
DS39564C-page 263