46DR83200A Datasheet, PDF (8/48 Pages) Integrated Silicon Solution, Inc – 32Mx8, 16Mx16 DDR2 DRAM

IS43/46DR83200A, IS43/46DR16160A
Operating Temperature Condition
Symbol Parameter
Rating^(1,2,3)
TOPER Commercial Temperature
Tc = 0 to +85
Industrial Temperature,
Tc = -40 to +95
Automotive Temperature (A1)
Ta = -40 to +85
Automotive Temperature (A2)
Tc = -40 to +105
Ta = -40 to +105
Notes:
1. Tc = Operating case temperature at center of package
2. Ta = Operating ambient temperature immediately above package center.
3. Both temperature specifications must be met.
Units
o_C
o_C
o_C
o_C
o_C
Thermal Resistance
Package
Substrate
60-ball BGA
84-ball BGA
4-layer
4-layer
Theta-ja
(Airflow = 0m/s)
39.71
34.66
Theta-ja
(Airflow = 1m/s)
34.21
30.07
Theta-ja
(Airflow = 2m/s)
32.17
28.66
Theta-jc
3.27
6.68
Units
C/W
C/W
ODT DC Electrical Characteristics
PARAMETER/CONDITION
SYMBOL MIN
Rtt effective impedance value for EMR(1)[A6,A2]=0,1; 75 Ω Rtt1(eff) 60
Rtt effective impedance value for EMR(1)[A6,A2]=1,0; 150 Ω Rtt2(eff) 120
Rtt effective impedance value for EMR(1)[A6,A2]=1,1; 50 Ω Rtt3(eff) 40
Deviation of VM with respect to VDDQ/2
ΔVM
-6
Notes:
1. Test condition for Rtt measurements
NOM
75
150
50
MAX
90
180
60
+6
UNITS
Ω
Ω
Ω
%
NOTES
1
1
1
1
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL
(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Rtt (eff)
Vih (ac) - Vil (ac)
I(Vih (ac)) - I(Vil (ac))
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
ΔVM = [(2 x VM / VDDQ) - 1] x 100%
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Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/16/2012