HYB25D256800CT Datasheet, PDF (66/94 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM

HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Electrical Characteristics
4.3
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pull-down V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
2. The weak pull-up V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
3. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
4. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device drain
to source voltages from 0.1 to 1.0 V.
80
70
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
Vout [V]
Figure 36 Weak Strength Pull-down Characteristics
Maximum
Typical high
Typical low
Minimum
2,0
2,5
0,0
0,0
-10,0
0,5
1,0
1,5
-20,0
-30,0
-40,0
-50,0
-60,0
-70,0
-80,0
Vout [V]
Figure 37 Weak Strength Pull-up Characteristics
2,0
2,5
Minim um
Typical low
Typical high
Maximum
Data Sheet
66
Rev. 1.6, 2004-12