HYB25D256800CT Datasheet, PDF (11/94 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM

HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Overview
Table 3 Ordering Information for Lead free (RoHS¹⁾ Compliant) Products
Product Type²⁾
Org. CAS-RCD-RP Clock CAS-RCD-RP Clock Speed
Latencies (MHz) Latencies (MHz)
Package
HYB25D256800CE–5A ×8 2.5-3-3
200 2-3-3
133 DDR400A P-TSOPII-66
HYB25D256160CE–5A ×16
HYB25D256800CE–5 ×8 3-3-3
200 2.5-3-3
166 DDR400B
HYB25D256160CE–5 ×16
HYB25D256800CE–6 ×8 2.5-3-3
166 2-3-3
133 DDR333
HYB25D256800CE(L)–6 ×8
HYB25D256160CE–6 ×16
HYB25D256400CE–7 ×4
143
DDR266A
HYB25D256800CF–6 ×8 2.5-3-3
166 2-3-3
133 DDR333 P-TFBGA-60
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic
equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January
2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and
polybrominated biphenyl ethers.
2) HYB: designator for memory components
25D: DDR SDRAMs at V_DDQ = 2.5 V
256: 256-Mbit density
400/800/160: Product variations ×4, ×8 and ×16
C: Die revision C
L: low power (available on request)
T/E/F/C: Package type TSOP(contains Lead), TSOP(Lead & Halone free), FBGA(Lead & Halone free) and FBGA (contains
Lead)
Data Sheet
11
Rev. 1.6, 2004-12