HYB25D256800CT Datasheet, PDF (55/94 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM

HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
3.5.4 Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access some specified time (t_RP) after the Precharge command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care”. Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
A0-A9, A11, A12
A10
BA0, BA1
All Banks
One Bank
BA
BA = bank address
(if A10 is Low, otherwise Don’t Care).
Don’t Care
Figure 30 Precharge Command
Data Sheet
55
Rev. 1.6, 2004-12