TLE6266G Datasheet, PDF (35/50 Pages) Infineon Technologies AG – System Basis Chip

Target Datasheet TLE 6266
8.3 Electrical Characteristics (cont’d)
9 V < V_S < 16 V; I_CC = -100 mA; normal mode; all outputs open; – 40 °C < T_j < 150 °C; CAN-
transceiver circuitry: – 40 °C < T_j < 125 °C; all voltages with respect to ground; positive current
defined flowing into pin; unless otherwise specified.
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Termination Outputs RTL, RTH
RTL to V_CC switch-on
resistance
RTL output voltage
RTL to BAT switch series
resistance
RTH to ground switch-on
resistance
RTH output voltage
RTH pull-down current
RTL pull-up current
RTH leakage current
RTL leakage current
R_RTL
–
40
95
W
I_o = – 10 mA
V_oRTL
R_oRTL
R_RTH
V_CC V_CC –
– 1.0 – 0.7
5
15 30
–
40 95
V
|I_o| < 1 mA;
kW ^VBAT ^{stand-by or cycl.}
wake mode
W
I_o = 10 mA
V_oRTH –
0.7 1.0 V
I_o = 1 mA;
low power mode
I_RTH,pd 40 75 120 mA
I_RTL,pu – 120 – 75 – 40 mA
failure cases 6 and 6a
failure cases 3, 3a, 5
and 7
I_RTH,lk – 5 0
5
mA ^VCC ^{= 0 V;}
V_S = 0 V;
V_RTH = 5 V;
T_j < 85 °C
I_RTL,lk – 5 0
5
mA ^VCC ^{= 0 V;}
V_S = 0 V;
V_RTL = 12 V;
T_j < 85 °C
CAN-Transceiver
Dynamic Characteristics
CANH and CANL bus output t_rd
transition time recessive-to-
dominant
CANH and CANL bus output t_dr
transition time dominant-to-
recessive
0.6 1.2 2.1 µs ^{10% to 90%;}
C₁ = 10 nF;
C₂ = 0; R₁ = 100 W
0.3 0.6 1.3 µs ^{10% to 90%;}
C₁ = 1 nF; C₂ = 0; R₁ =
100 W
Version 1.06
36
2002-11-26