TLE6266G Datasheet, PDF (30/50 Pages) Infineon Technologies AG – System Basis Chip

Target Datasheet TLE 6266
8.3 Electrical Characteristics (cont’d)
9 V < V_S < 16 V; I_CC = -100 mA; normal mode; all outputs open; – 40 °C < T_j < 150 °C; CAN-
transceiver circuitry: – 40 °C < T_j < 125 °C; all voltages with respect to ground; positive current
defined flowing into pin; unless otherwise specified.
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Switches
High Side Output OUTH1; (controlled by PWM or bit 1 of SPI input word)
Static Drain-Source
R _{– DSON H1}
1.0 2.0 W
ON-Resistance;
I_OUTH1 = -0.25 A
1.5 4.0 W
Active zener voltage
V_OUTH1 -5.0 -3.0 -0.5 V
Clamp diode forward voltage V_OUTH1
0.8 1
V
Leakage current
I_OLH1
-100 -5 –
µA
Switch ON delay time
t_dONH1
10 100 ms
Switch OFF delay time
t_dOFFH1
20 100 ms
Overcurrent shutdown
threshold
I_SDH1
-1.0 -0.6 -0.3 A
5.2 V £ V_S £ 9 V
I_OUTH1 = – 0.25 A
I_OUTH1 = 0.25 A
V_OUTH1 = 0 V
PWM to OUTH1;
R_L = 100 W
PWM to OUTH1;
R_L = 100 W
Shutdown delay time
Current limit
t_dSDH1
I_OCLH1
10 25 50 ms
-2.0 -1.0 -0.5 A
High Side Output OUTH2; (controlled by bit 2 of SPI input word)
Static Drain-Source
R _{– DSON H2}
1.0 2.0 W
ON-Resistance;
I_OUTH2 = -0.25 A
1.5 4.0 W
Active zener voltage
V_OUTH2 -5.0 -3.0 -0.5 V
Clamp diode forward voltage V_OUTH2
0.8 1
V
Leakage current
I_OLH1
-100 -5 –
µA
Switch ON delay time
t_dONH1
10 100 µs
Switch OFF delay time
t_dOFFH1
20 100 µs
5.2 V £ V_S £ 9 V
I_OUTH2 = – 0.25 A
I_OUTH2 = 0.25 A
V_OUTH2 = 0 V
CSN high to OUTH2;
R_L = 100 W
CSN high to OUTH2;
R_L = 100 W
Version 1.06
31
2002-11-26