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HMT164U6AFP6C-S6 Datasheet, PDF (51/57 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM Unbuffered DIMMs
HMT164U6AFP(R)6C
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
DDR3 1600 Speed Bin
DDR3-1600G
(optional)
DDR3-1600H
DDR3-1600J
CL - nRCD - nRP
8-8-8
9-9-9
10-10-10
Parameter
Symbol min max min max min max
DDR3-1600K
(optional)
11-11-11
min max
Unit
Internal read command
to first data
tAA
10
20 11.25 20 12.5 20 13.75 20
ns
ACT to internal read or
write delay time
tRCD
10
— 11.25 — 12.5 — 13.75 —
ns
Note
PRE command period tRP
10
— 11.25 — 12.5 — 13.75 —
ns
ACT to ACT or REF
command period
tRC
45
— 46.25 — 47.5 — 48.75 —
ns
ACT to PRE command
period
tRAS
35
9*
tREFI
35
9*
tREFI
35
9*
tREFI
35
9*
tREFI
ns
CWL = 5 tCK(AVG)
CL = 5
CWL = 6, 7, 8 tCK(AVG)
2.5 3.3
Reserved
2.5 3.3
Reserved
2.5 3.3
Reserved
Reserved
Reserved
ns 1,2,3,4,8
ns
4
CWL = 5 tCK(AVG) 2.5
3.3
2.5
3.3
2.5 3.3 2.5 3.3
ns 1,2,3,8
CL = 6 CWL = 6 tCK(AVG) 1.875 < 2.5 1.875 < 2.5 Reserved
Reserved
ns 1,2,3,4,8
CWL = 7, 8 tCK(AVG) Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5 tCK(AVG) Reserved
Reserved
Reserved
Reserved
ns
4
CL = 7
CWL = 6
CWL = 7
tCK(AVG) 1.875 < 2.5 1.875 < 2.5 1.875 < 2.5
tCK(AVG) 1.5 <1.875 Reserved
Reserved
Reserved
Reserved
ns 1,2,3,4,8
ns 1,2,3,4,8
CWL = 8 tCK(AVG) Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5 tCK(AVG) Reserved
Reserved
Reserved
Reserved
ns
4
CL = 8
CWL = 6
CWL = 7
tCK(AVG) 1.875 < 2.5 1.875 < 2.5 1.875 < 2.5 1.875 < 2.5
tCK(AVG) 1.5 <1.875 1.5 <1.875 Reserved
Reserved
ns 1,2,3,8
ns 1,2,3,4,8
CWL = 8 tCK(AVG) 1.25 < 1.5
Reserved
Reserved
Reserved
ns 1,2,3,4
CWL = 5, 6 tCK(AVG) Reserved
Reserved
Reserved
Reserved
ns
4
CL = 9 CWL = 7 tCK(AVG) 1.5 <1.875 1.5 <1.875 1.5 <1.875 Reserved
ns 1,2,3,4,8
CWL = 8 tCK(AVG) 1.25 < 1.5 1.25 < 1.5
Reserved
Reserved
ns 1,2,3,4
CWL = 5, 6 tCK(AVG) Reserved
Reserved
Reserved
Reserved
ns
4
CL = 10 CWL = 7 tCK(AVG) 1.5 <1.875 1.5 <1.875 1.5 <1.875 1.5 <1.875 ns 1,2,3,8
CWL = 8 tCK(AVG) 1.25 < 1.5 1.25 < 1.5 1.25 < 1.5
Reserved
ns 1,2,3,4
Rev. 0.1 / Dec 2008
51