HMT164U6AFP6C-S6 Datasheet, PDF (49/57 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM Unbuffered DIMMs

HMT164U6AFP(R)6C
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
DDR3 1066 Speed Bin
DDR3-1066E DDR3-1066F DDR3-1066G
CL - nRCD - nRP
6-6-6
7-7-7
8-8-8
Unit Note
Parameter
Symbol min max min max min max
Internal read command to
first data
t_AA
11.25
20 13.125 20
15
20
ns
ACT to internal read or
write delay time
t_RCD 11.25
— 13.125 —
15
—
ns
PRE command period
t_RP 11.25
— 13.125 —
15
—
ns
ACT to ACT or REF
command period
t_RC 48.75
— 50.625 —
52.5
—
ns
ACT to PRE command
period
t_RAS 37.5 9 * tREFI 37.5 9 * tREFI 37.5 9 * tREFI
CL = 5
CWL = 5
CWL = 6
t_CK(AVG)
t_CK(AVG)
2.5
3.3
Reserved
CL = 6
CWL = 5
CWL = 6
t_CK(AVG) 2.5
t_CK(AVG) 1.875
3.3
< 2.5
CL = 7
CWL = 5
CWL = 6
t_CK(AVG)
t_CK(AVG)
Reserved
1.875 < 2.5
CL = 8
CWL = 5
CWL = 6
t_CK(AVG)
t_CK(AVG)
Reserved
1.875 < 2.5
Supported CL Settings
5, 6, 7, 8
Reserved
Reserved
2.5
3.3
Reserved
Reserved
2.5
3.3
Reserved
Reserved
Reserved
1.875 < 2.5
Reserved
1.875 < 2.5
6, 7, 8
Reserved
Reserved
Reserved
1.875 < 2.5
6, 8
Supported CWL Settings
5, 6
5, 6
5, 6
ns
ns 1)2)3)4)6)
ns 4)
ns 1)2)3)6)
ns 1)2)3)4)
ns 4)
ns 1)2)3)4)
ns 4)
ns 1)2)3)
n_CK
n_CK
Rev. 0.1 / Dec 2008
49