HMT164U6AFP6C-S6 Datasheet, PDF (50/57 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM Unbuffered DIMMs

HMT164U6AFP(R)6C
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
DDR3 1333 Speed Bin
CL - nRCD - nRP
DDR3-1333F
(optional)
7-7-7
DDR3-1333G
DDR3-1333H
DDR3-1333J
(optional)
8-8-8
9-9-9
10-10-10
Unit
Parameter
Symbol min max min max min max min max
Internal read
command to first
t_AA
10.5 20
12
20 13.5 20
15
20
ns
ACT to internal read
or write delay time
t_RCD
10.5
—
12
— 13.5 —
15
—
ns
Note
PRE command period t_RP
10.5
—
12
— 13.5 —
15
—
ns
ACT to ACT or REF
command period
t_RC
46.5
—
48
— 49.5 —
51
—
ns
ACT to PRE
command period
t_RAS
36
9*
tREFI
36
9*
tREFI
36
9*
tREFI
36
9*
tREFI
ns
CWL = 5 t_CK(AVG)
CL = 5
CWL = 6, 7 t_CK(AVG)
2.5 3.3
Reserved
2.5 3.3
Reserved
Reserved
Reserved
Reserved
ns
Reserved
ns
CWL = 5 t_CK(AVG) 2.5
3.3
2.5 3.3 2.5 3.3 2.5 3.3
ns
CL = 6 CWL = 6 t_CK(AVG) 1.875 < 2.5
Reserved
Reserved
Reserved
ns
CWL = 7 t_CK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL = 5 t_CK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL = 7 CWL = 6 t_CK(AVG) 1.875 < 2.5 1.875 < 2.5 Reserved
Reserved
ns
CWL = 7 t_CK(AVG) 1.5 <1.875 Reserved
Reserved
Reserved
ns
CWL = 5 t_CK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL = 8 CWL = 6 t_CK(AVG) 1.875 < 2.5 1.875 < 2.5 1.875 < 2.5 1.875 < 2.5 ns
CWL = 7 t_CK(AVG) 1.5 <1.875 1.5 <1.875 Reserved
Reserved
ns
CWL = 5, 6 t_CK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL = 9
CWL = 7 t_CK(AVG) 1.5 <1.875 1.5 <1.875 1.5 <1.875 Reserved
ns
CWL = 5, 6 t_CK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL = 10
CWL = 7 t_CK(AVG)
1.5 <1.875 1.5 <1.875 1.5 <1.875
ns
1.5 <1.875
(Optional)
(Optional)
(Optional)
ns
Supported CL Settings
5, 6, 7, 8, 9 5, 6, 7, 8, 9
6, 8, 9
6, 8, 10
n_CK
Supported CWL Settings
5, 6, 7
5, 6, 7
5, 6, 7
5, 6, 7
n_CK
1,2,3,4,7
4
1,2,3,7
1,2,3,4,7
4
4
1,2,3,4,7
1,2,3,4
4
1,2,3,7
1,2,3,4
4
1,2,3,4
4
1,2,3
5
Rev. 0.1 / Dec 2008
50