HMT164U6AFP6C-S6 Datasheet, PDF (28/57 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM Unbuffered DIMMs

HMT164U6AFP(R)6C
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
Parameter
Differential Output Slew Rate
Symbol
SRQdiff
DDR3-800
Min Max
5
10
DDR3-1066
Min Max
5
10
DDR3-1333
Min Max
5
10
***Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
diff: Differential Signals
For Ron = RZQ/7 setting
< Table 6.6.4: Differential Output Slew Rate >
DDR3-1600
Min Max
TBD 10
Units
V/ns
6.5 Overshoot and Undershoot Specifications
6.5.1 Address and Control Overshoot and Undershoot Specifications
Description
Maximum peak amplitude allowed for
overshoot area (see Figure)
Maximum peak amplitude allowed for
undershoot area (see Figure)
Maximum overshoot area above VDD
(See Figure)
Maximum undershoot area below VSS
(See Figure)
DDR3-800
0.4V
0.4V
Specification
DDR3-1066 DDR3-1333
0.4V
0.4V
DDR3-1600
0.4V
0.4V
0.4V
0.4V
0.67 V-ns
0.5 V-ns
0.4 V-ns
0.33 V-ns
0.67 V-ns
0.5 V-ns
0.4 V-ns
0.33 V-ns
< Table 6.5.1: AC Overshoot/Undershoot Specification for Address and Control Pins >
< Figure 6.5.1: Address and Control Overshoot and Undershoot Definition >
Maximum Amplitude
Overshoot Area
Volts
(V)
VDD
VSS
Maximum Amplitude
Time (ns)
Undershoot Area
Rev. 0.1 / Dec 2008
28