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PXD20 Datasheet, PDF (89/130 Pages) Freescale Semiconductor, Inc – PXD20 Microcontroller
Electrical characteristics
4 Data based on device simulation.
5 2x sys clock required for generation of DDR timing.
6 fCPU of 125 MHz can be achieved only at temperatures up to 105 °C with a maximum FM depth of 2%.
7 Data based on characterization results, not tested in production
4.13 Fast internal RC oscillator (16 MHz) electrical characteristics
The device provides a fast internal RC oscillator (FIRC). This is used as the default clock at the power-up of the device.
Table 40. Fast internal oscillator electrical characteristics
Symbol
C
Parameter
Conditions1
Value2
Unit SpecID
Min Typ Max
fRCM CC3 P RC oscillator high frequency
TA = 25 °C, trimmed —
IRCMRUN CC3 D RC oscillator high frequency current in run- TA = 25 °C, trimmed —
ning mode
IRCMPWD CC3 D RC oscillator high frequency current in power
TA = 25 °C
—
down mode
RCMVAR CC4 C RC oscillator variation in temperature and
supply with respect to fRC at TA = 55 °C in
high-frequency configuration
—
–5
16 — MHz O12.1
— 200 µA O12.2
— 10 µA O12.3
— +5 % O12.5
1 VDD = 3.3 V ±10% / 5.0 V ±10%, TA = –40 to 105 °C, unless otherwise specified.
2 All values need to be confirmed during device validation.
3 Guaranteed by device simulation, not tested in production
4 Guaranteed by device characterization, not tested in production
4.14 Slow internal RC oscillator (128 kHz) electrical characteristics
The device provides a slow internal RC oscillator (SIRC). This can be used as the reference clock for the RTC module.
Table 41. Slow internal RC oscillator electrical characteristics
Symbol C
Parameter
Conditions1
Value2
Unit SpecID
Min Typ Max
fRCL CC3 P RC oscillator low frequency
TA = 25 °C, trimmed
— 128 — kHz O13.1
IRCL CC3 D RC oscillator low frequency current
TA = 25 °C, trimmed
— — 5 µA O13.2
RCLTRI CC3 C RC oscillator precision after trimming of TA = 25 °C
M
fRCL
–2 — +2 % O13.3
RCLVAR CC3 C RC oscillator variation in temperature and High frequency config- –10 — +10 % O13.4
3
supply with respect to fRC at TA = 55 °C in uration
high frequency configuration
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = –40 to +105 °C, unless otherwise specified.
2 All values need to be confirmed during device validation.
3 Guaranteed by device simulation, not tested in production
PXD20 Microcontroller Data Sheet, Rev. 2
Freescale Semiconductor
Preliminary—Subject to Change Without Notice
89