I.MX27 Datasheet, PDF (45/148 Pages) Freescale Semiconductor, Inc – Multimedia Applications Processor

Electrical Characteristics
Table 13. DDR (Double Data Rate) I/O Pads DC Electrical Parameters (continued)
Parameter
Symbol Test Conditions
Min
Typical
Max
Low-level output current
I_OL
V_OL=0.2*NV_{DD_DDR}
—
—
Normal
3.6
High
7.2
Max High¹
10.8
DDR Drive¹
14.4
Low-level input current
High-level input current
Tri-state current
I_IL
V_I = 0
—
1.7
2
I_IH
V_I = NV_{DD_DDR}
—
2
I_Z
V_I = NV_{DD_DDR} or 0
—
1.7
2
I/O = high Z
Note:
1 _{Max High and DDR Drive strengths should be avoided due to excessive overshoot and ringing.}
Units
mA
μA
μA
μA
4.2.1.2 AC Electrical Characteristics
Figure 2 depicts the load circuit for output pads. Figure 3 depicts the output pad transition time waveform.
The range of operating conditions appear in Table 14 for slow general I/O, Table 15 for fast general I/O,
and Table 16 for DDR I/O (unless otherwise noted).
From Output
Under Test
Test Point
CL
CL includes package, probe and jig capacitance
Figure 2. Load Circuit for Output Pad
Output (at pad)
80%
20%
PA1
PA1
Figure 3. Output Pad Transition Time Waveform
NVDD
80%
20%
0V
Table 14. AC Electrical Characteristics of Slow General I/O Pads
ID
Parameter
PA1 Output Pad Transition Times (Max High)
Output Pad Transition Times (High)
Output Pad Transition Times (Standard Drive)
— Maximum Input Transition Times¹
Note:
Symbol Test Condition Min Typical Max
tpr
25 pF
1.25 1.9
3.2
50 pF
1.95
2.9
4.75
tpr
25 pF
1.45
—
4.8
50 pF
2.6
8.4
tpr
25 pF
2.6
—
8.5
50 pF
5.1
16.5
trm
—
—
—
25
Units
ns
ns
ns
ns
i.MX27 and i.MX27L Data Sheet, Rev. 1.5
Freescale Semiconductor
45