908E621_07 Datasheet, PDF (12/62 Pages) Freescale Semiconductor, Inc – Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror

STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V_SUP ≤ 16 V, -40°C ≤ T_J ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HALF-BRIDGE OUTPUTS HB1 AND HB2
Switch On Resistance
High-Side, T_J = 25°C, I_LOAD = 1.0 A
Low-Side, T_J = 25°C, I_LOAD = 1.0 A
R_DS(ON)-HB12
–
–
mΩ
750
900
750
900
Overcurrent Shutdown
High-Side
Low-Side
I_HBOC12
A
1.0
–
1.5
1.0
–
1.5
Overcurrent Shutdown blanking time ⁽¹⁸⁾
t_OCB
–
4-8
–
µs
Switching Frequency ⁽¹⁸⁾
f_PWM
–
–
25
kHz
Free-Wheeling Diode Forward Voltage
High-Side, T_J = 25°C, I_LOAD = 1.0 A
Low-Side, T_J = 25°C, I_LOAD = 1.0 A
V_HSF
V_LSF
V
–
0.9
–
–
0.9
–
Leakage Current
Low-Side Current to Voltage Ratio ⁽¹⁹⁾
V_ADOUT [V] / I_HB [A], CSA = 1, (measured and trimmed I_HB = 200 mA)
V_ADOUT [V] / I_HB [A], CSA = 0, (measured and trimmed I_HB = 500 mA)
I_LeakHB
CR_RATIOHB12
–
17.5
3.5
<0.2
25.0
5.0
10
µA
V/A
32.5
6.5
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
High-Side, T_J = 25°C, I_LOAD = 1.0 A
Low-Side, T_J = 25°C, I_LOAD = 1.0 A
R_DS(ON)-HB34
–
–
mΩ
275
325
275
325
Overcurrent Shutdown
High-Side
Low-Side
I_HBOC34
A
4.8
–
7.2
4.8
–
7.2
Overcurrent Shutdown blanking time ⁽¹⁸⁾
t_OCB
–
4-8
–
µs
Switching Frequency ⁽¹⁸⁾
f_PWM
–
–
25
kHz
Free-Wheeling Diode Forward Voltage
High-Side, T_J = 25°C, I_LOAD = 1.0 A
Low-Side, T_J = 25°C, I_LOAD = 1.0 A
V_HSF
–
V_LSF
–
Leakage Current
I_LeakHB
–
Low-Side Current to Voltage Ratio ⁽¹⁹⁾
CR_RATIOHB34
V_ADOUT [V] / I_HB [A], CSA = 1, (measured and trimmed I_HB = 500 mA)
3.5
V_ADOUT [V] / I_HB [A], CSA = 0, (measured and trimmed I_HB = 2 A)
0.7
0.9
0.9
<0.2
5.0
1.0
V
–
–
10
µA
V/A
6.5
1.3
Notes
18. This parameter is guaranteed by process monitoring but is not production tested.
19. This parameter is guaranteed only if correct trimming was applied
908E621
12
Analog Integrated Circuit Device Data
Freescale Semiconductor