908E621_07 Datasheet, PDF (10/62 Pages) Freescale Semiconductor, Inc – Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror

STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V_SUP ≤ 16 V, -40°C ≤ T_J ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER
LIN Transceiver Output Voltage
Recessive State, TXD HIGH, I_OUT = 1.0 µA
Dominant State, TXD LOW, 500 Ω External Pullup Resistor
Normal Mode Pullup Resistor to VSUP
Stop, Sleep Mode Pullup Current Source
Output Current Shutdown Threshold
Output Current Shutdown Timing
Leakage Current to GND
V_SUP Disconnected, V_BUS at 18V
Recessive state, 8V ≤ V_SUP ≤ 18V, 8V ≤ V_BUS ≤ 18V, V_BUS ≥ V_SUP
GND Disconnected, V_GND = V_SUP, V_BUS at -18V
LIN Receiver
Receiver Threshold Dominant
Receiver Threshold Recessive
Receiver Threshold Center
Receiver Threshold Hysteresis
V _{LIN_REC}
V_SUP -1
—
V _{LIN_DOM}
—
—
R _PU
20
30
I_PU
I_BLIM
—
20
100
230
I_BLS
5.0
–
I_BUS
–
1.0
I_BUS-PAS-REC
0.0
3.0
I_BUS-NOGND
-1.0
–
V_{BUS_DOM}
–
–
V_{BUS_REC}
0.6
–
V_{BUS_CNT}
0.475
0.5
V_{BUS_HYS}
–
–
V
—
1.4
47
kΩ
—
µA
280
mA
40
µs
10
20
1.0
0.4
–
0.525
0.175
µA
µA
mA
VSUP
908E621
10
Analog Integrated Circuit Device Data
Freescale Semiconductor