908E621_07 Datasheet, PDF (11/62 Pages) Freescale Semiconductor, Inc – Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror

STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V_SUP ≤ 16 V, -40°C ≤ T_J ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HIGH-SIDE OUTPUT HS1
Switch On Resistance
T_J = 25°C, I_LOAD = 1.0 A
Overcurrent Shutdown
Overcurrent Shutdown blanking time ⁽¹⁵⁾
Current to Voltage Ratio ⁽¹⁶⁾
V_ADOUT [V] / I_HS [A], (measured and trimmed I_HS = 2 A)
R_DS(ON)-HS1
–
mΩ
185
225
I_HSOC1
6.0
–
9.0
A
t_OCB
–
4-8
–
µs
CR_RATIOHS1
0.84
1.2
1.56
V/A
High-Side Switching Frequency ⁽¹⁵⁾
f_PWMHS
–
–
25
kHz
High-Side Free-Wheeling Diode Forward Voltage
T_J = 25°C, I_LOAD = 1 A
V_HSF
–
0.9
–
V
Leakage Current
HIGH-SIDE OUTPUTS HS2 AND HS3⁽¹⁷⁾
I_LeakHS
–
<0.2
10
µA
Switch On Resistance
T_J = 25°C, I_LOAD = 1.0 A
Overcurrent Shutdown
Overcurrent Shutdown blanking time ⁽¹⁵⁾
Current to Voltage Ratio ⁽¹⁶⁾
V_ADOUT [V] / I_HS [A], (measured and trimmed I_HS = 2 A)
R_DS(ON)-HS23
I_HSOC23
t_OCB
CR_RATIOHS23
–
3.6
–
1.16
440
–
4-8
1.66
mΩ
500
5.6
A
–
µs
2.16
V/A
High-Side Switching Frequency ⁽¹⁵⁾
f_PWMHS
–
–
25
kHz
High-Side Free-Wheeling Diode Forward Voltage
T_J = 25°C, I_LOAD = 1 A
V_HSF
–
0.9
–
V
Leakage Current
I_LeakHS
Notes
15. This parameter is guaranteed by process monitoring but is not production tested.
16. This parameter is guaranteed only if correct trimming was applied.
17. The high-side HS3 can be only used for resistive loads.
–
<0.2
10
µA
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
11