ES29LV160F Datasheet, PDF (60/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
A2. Page Program
In ES29LV160F device, a page program is provided for more accelerated programming operation.
In this mode, 32 words are parallel programmed to greatly reduce total program time. If this mode
is combined with ACC (12V), even faster program result can be obtained. As shown in the program
performance table A2, total program time can be reduced down to 30% at maximum, compared
with normal program mode..
Page Programming allows the system to write 32 words (BYTE#=High) in one period of
programming operation. This results in faster and more effective programming time than the
standard programming algorithms. The page program command sequence is initiated by writing
two unlock write cycles, followed by the page program set-up command. And then full number ( 32
cycles ) of address/data cycles should be sequentially followed to activate the page program
operation. The actual page program starts at the rising edge of the last WE# pulse of the total
required address/data loading cycles.
One after a page program is started; the system is not required to provide further controls or
timings. During a page program operation, data toggle (DQ6) should be used for check if the page
program operation is completed or not, instead of DQ7. Data polling by DQ7 is not supported
during the page program operation. It should be also noted that if the Address [4:0] are not written
either sequentially or written completely to the last address, some data may be over-written, lost or
not guaranteed properly. Moreover, Address [19:5] should not be changed until page program
starts.
Fig. A2 Page program operation
Rev.0A (Dec 12, 2007) 60