ES29LV160F Datasheet, PDF (34/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected,
Data# Polling on DQ7 is active for approximately 1.8 µs, then the device returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data, it can read valid
data at DQ7– DQ0 on the following read cycles. This is because DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted low. Figure 17.8 on page 51, illustrates this.
Table 11.1 on page 38 shows the outputs for Data# Polling on DQ7. Figure 11.1 on page 34 shows
the Data# Polling algorithm.
Figure 11.1 Data# Polling Algorithm
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