ES29LV160F Datasheet, PDF (55/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
18. Erase and Programming Performance
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip
Programming
Time
(Note 3)
Byte Mode
Word Mode
Typ
(Note 1)
0.4
13
5
7
13
9
Max
(Note 2)
10
150
210
38
26
Unit
Comments
s
s
㎲
㎲
Excludes system level
Overhead (Note 4)
s
s
Notes
1. Typical program and erase times assume the following conditions: 25°C, V_CC = 3.0 V, 100,000 cycles, checkerboard data
pattern.
2. Under worst case conditions of 90°C, V_CC = 2.7 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10.1 on page 32 for further information on command definitions.
5. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
19. TSOP and BGA Pin Capacitance
Parameter Symbol
Parameter Description
C_IN
Input Capacitance
Test Setup
V_IN = 0
C_OUT
Output Capacitance
V_OUT = 0
C_IN2
Control Pin Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
V_IN = 0
Package
TSOP
BGA
TSOP
BGA
TSOP
BGA
Typ
Max
Unit
6
7.5
pF
4.2
5.0
pF
8.5
12
pF
5.4
6.5
pF
7.5
9
pF
3.9
4.7
pF
Rev.0A (Dec 12, 2007) 55