ES29LV160F Datasheet, PDF (32/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
10. Command Definitions
Table 10.1 ES29LV160F Command Definitions
Command
Sequence
(Note 1)
Read (Note 6)
First
Addr Data
Second
Addr Data
Bus Cycles (Notes 2-5)
Third
Fourth
Addr Data Addr Data
Fifth
Addr Data
Sixth
Addr Data
1 RA
RD
Reset (Note 7)
1 XXX
F0
Manufacturer
ID
Word
Byte
4
555
AAA
AA
2AA
555
55
555
AAA
90
X00
4A
Device ID,
Top Boot
Block
Word
555
2AA
555
X01 22C4
4
AA
55
90
Byte
AAA
555
AAA
X02 C4
Device ID,
Word
555
2AA
555
X01 2249
Bottom Boot
4
AA
55
90
Block
Byte
AAA
555
AAA
X02
49
Word
555
Sector
2AA
555
(SA)
X02
XX00
XX01
Protect Verify
4
AA
55
90
(Note 9)
Byte
AAA
555
AAA
(SA)
00
X04
01
CFI Query
(Note 10)
Program
Unlock Bypass
Word
55
1
98
Byte
AA
Word
555
2AA
555
4
AA
55
A0
PA
PD
Byte
AAA
555
AAA
Word
555
2AA
555
3
AA
55
20
Byte
AAA
555
AAA
Unlock Bypass Program
(Note 11)
2 XXX
A0
PA
PD
Unlock Bypass Reset
(Note 12)
2 XXX
90
XXX F0
Chip Erase
Sector Erase
Word
555
2AA
555
555
2AA
555
6
AA
55
80
AA
55
10
Byte
AAA
555
AAA
AAA
555
AAA
Word
555
2AA
555
555
2AA
6
AA
55
80
AA
55
Byte
AAA
555
AAA
AAA
555
SA
30
Erase Suspend (Note 13)
1 XXX B0
Erase Resume (Note 14)
1 XXX
30
Legend
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Rev.0A (Dec 12, 2007) 32