ES29LV160F Datasheet, PDF (12/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
7.1 Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word
configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ15–DQ0 are
active and controlled by CE# and OE#. If the BYTE# pin is set at logic 0, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The
data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1)
address function.
7.2 Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is
the power control and selects the device. OE# is the output control and gates array data to the
output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs
array data in words or bytes.
The internal state machine is set for reading array data upon device power-up, or after a hardware
reset. This ensures that no spurious alteration of the memory content occurs during the power
transition. No command is necessary in this mode to obtain array data. Standard microprocessor
read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the command register
contents are altered.
See Reading Array Data on page 25 for more information. Refer to the AC Read Operations on
page 45 for timing specifications and to Figure 17.1 on page 45 for the timing diagram. ICC1 in DC
Characteristics on page 41 represents the active current specification for reading array data.
7.3 Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and
erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in
bytes or words. See Word/Byte Configuration on page 12 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device
enters the Unlock Bypass mode, only two write cycles are required to program a word or byte,
instead of four. Word/ Byte Program Command Sequence on page 26 has details on programming
data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 7.2 on page
15 and Table 7.3 on page 16 indicate the address space that each sector occupies. A “sector
address” consists of the address bits required to uniquely select a sector. The Command
Definitions on page 25 has details on erasing a sector or the entire chip, or suspending/resuming
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