ES29LV160F Datasheet, PDF (49/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
17.4 Erase/Program Operations
Parameter
JEDEC
Std
t_AVAV
t_WC
t_AVWL
t_AS
t_WLAX
t_AH
t_DVWH
t_DS
t_WHDX
t_DH
t_OES
t_GHWL
t_GHWL
t_ELWL
t_WHEH
t_WLWH
t_WHWL
t_CS
t_CH
t_WP
t_WPH
t_SR/W
t_WHWH1
t_WHWH1
t_WHWH2
t_WHWH2
t_VCS
t_RB
t_BUSY
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Byte
Word
Sector Erase Operation (Note 2)
V_CC Setup Time ( Note 1)
Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
Speed Options
55R
70
55
70
0
35
40
35
40
0
Min
0
0
0
0
25
30
25
30
Min
20
5
Typ
7
0.4
Min
50
0
Max
90
Unit
ns
ns
㎲
sec
㎲
ns
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 55 for more information.
Figure 17.5 Program Operation Timings
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Rev.0A (Dec 12, 2007) 49