ES29LV160F Datasheet, PDF (22/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
Addresses
(Word
Mode)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Table 8.2 System Interface String
Addresses
(Byte
Mode)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
Data
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
Description
V_CC Min. (write/erase)
D7-D4: volt, D3-D0: 100 mV
V_CC Max. (write/erase)
D7-D4 : volt, D3-D0: 100 mV
V_PP Min. voltage (00h = no V_PP pin present)
V_PP Max. voltage (00h = no V_PP pin present)
Typical timeout per single byte/word write 2^N us
Typical timeout for Min. size buffer write 2^N us
(00h = not supported)
Typical timeout per individual block erase 2^N ms
Typical timeout for full chip erase 2^N ms
(00h = not supported)
Max. timeout for byte/word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual block erase 2^N times typical
Max. timeout for full chip erase 2^N times typical
(00h = not supported)
Addresses
(Word
Mode)
27h
28h
29h
2Ah
2Bh
2Ch
Table 8.3 Device Geometry Definition
Addresses
(Byte
Mode)
4Eh
50h
52h
54h
56h
58h
Data
0015h
0002h
0000h
0000h
0000h
0004h
Description
Device Size = 2^N byte
Flash Device Interface description
(02h = x8,x16 Asynchronous)
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Rev.0A (Dec 12, 2007) 22