ES29LV160F Datasheet, PDF (41/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
14. DC Characteristics
14.1 CMOS Compatible
Parameter Description
Test Conditions
Min
Typ
I_LI
Input Load Current
V_IN = V_SS to V_CC,
V_CC = V_{CC max}
I_LIT
A9 Input Load Current
V_CC = V_{CC max}; A9 = 12.5V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC,
V_CC = V_{CC max}
CE# = V_IL,
10MHz
15
OE# = V_IH,
5MHz
9
I_CC1
V_CC Active Read Current
(Notes 1,2)
Byte Mode
CE# = V_IL,
1MHZ
10MHz
2
18
OE# = V_IH,
5MHz
9
Word Mode
1MHZ
2
I_CC2
V_CC Active Write Current
(Note 2, 3, 4)
CE# = V_IL, OE# = V_IH
20
I_CC3
V_CC Standby Current (Note 2)
CE#,
RESET# = V_CC±0.3 V
V_CC Standby Current
I_CC4
During Reset
(Note 2)
RESET# = V_SS±0.3 V
I_CC5
Automatic Sleep Mode
(Note 2, 5)
V_IH = V_CC±0.3 V;
V_IL = V_SS±0.3 V
V_IL
Input Low Voltage
10
10
10
-0.5
V_IH
Input High Voltage
Voltage for Autoselect and
V_ID
Temporary Sector
Unprotect
V_CC = 3.3 V
0.7 x V_CC
11.5
V_OL
Output Low Voltage
I_OL = 4.0 ㎃, V_CC = V_{CC min}
Max
±1.0
35
±1.0
30
16
4
35
16
4
35
Unit
㎂
㎃
㎃
㎂
50
㎂
㎂
0.8
V_CC
+0.3
12.5
0.45
V
V_OH1
V_OH2
Output High Voltage
I_OH = -2.0 ㎃, V_CC = V_{CC min}
2.4
I_OH = -100 ㎂, V_CC = V_{CC min}
V_CC-0.4
V_LKO
Low V_CC Lock-Out Voltage
(Note 5)
2.3
2.5
Notes
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical V_CC is 3.0 V.
2. Maximum ICC specifications are tested with V_CC = V_CCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 10 uA.
5. Not 100% tested.
Rev.0A (Dec 12, 2007) 41