ES29LV160F Datasheet, PDF (53/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
Figure 17.12 Sector Protect/Unprotect Timing Diagram
Note
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
17.6 Alternate CE# Controlled Erase/Program
Parameter
JEDEC
Std
t_AVAV
t_WC
t_AVEL
t_AS
t_ELAX
t_AH
t_DVEH
t_DS
t_EHDX
t_DH
t_OES
t_GHEL
t_GHEL
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before Write
(OE# High to WE# Low)
Speed Options
55R
70
Unit
Min
55
70
ns
Min
0
ns
Min
35
40
ns
Min
35
40
ns
Min
0
ns
Min
0
ns
Min
0
ns
t_WLEL
t_WS
WE# Setup Time
Min
0
ns
t_EHWH
t_WH
WE# Hold Time
Min
0
ns
t_ELEH
t_CP
CE# Pulse Width
Min
35
ns
t_EHEL
t_CPH
CE# Pulse Width
Min
30
ns
t_SR/W
Latency Between Read and Write Operations
Min
20
ns
t_WHWH
t_WHWH1
Programming Operation (Note 2)
Byte
Typ
5
㎲
1
Word
Typ
7
t_WHWH
2
t_WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 55 for more information.
Rev.0A (Dec 12, 2007) 53