ES29LV160F Datasheet, PDF (58/71 Pages) Excel Semiconductor Inc. – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

ES29LV160F
Excel Semiconductor Inc.
Additional Features
(ES29LV160F)
In ES29LV160F device, a few of additional and useful features are provided. These are additional
so that its functionality is 100% compatible with other flash devices. More explanations for each
additional features or functions are described in detail below.
„ Deep power-down mode ( less than 1uA )
„ Program acceleration mode ( ACC pin )
„ Page buffer program ( 32 words )
„ 256 bytes of security sector for customer codes
„ Factory and customer-lockable functions for the security sector
A1. Deep power-down mode
When the system is not reading or writing to the device, it can place the device in the standby
mode. In this mode, current consumption is reduced, and the outputs are placed in the high
impedance state, independent of the OE# input. The device normally enters the CMOS standby
mode (typically 10uA) when the CE# and RESET# pins are both held at V_CC ± 0.3 V.
In ES29LV160F device, another power-saving mode is provided, called ‘deep power-down mode’.
The device can be placed into this deep power-down mode by issuing a command. And then
RESET# should be taken to VIL (Vss±0.3V) to fully suppress the current consumption down to
less than typically 1uA(maximum 10uA). In other word, the extremely low current consumption can
be kept only while RESET# is held at Vss±0.3V.
As soon as RESET# goes to High (VIH), the device returns to normal read mode. But, a period of
recovery time (Min. tDRCV is 20usec) is needed before the device is fully ready to read the data
from the cell array with normal fast access time. Refer to the command cycles to enter the deep
power-down mode at the table A1.
Rev.0A (Dec 12, 2007) 58