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LM3S101_0610 Datasheet, PDF (83/300 Pages) List of Unclassifed Manufacturers – Microcontroller
LM3S101 Data Sheet
7 Internal Memory
The LM3S101 microcontroller comes with 2 KB of bit-banded SRAM and 8 KB of flash memory.
The flash controller provides a user-friendly interface, making flash programming a simple task.
Flash protection can be applied to the flash memory on a 2-KB block basis.
7.1 Block Diagram
Figure 7-1. Flash Block Diagram
Flash Timing
USECRL
Cortex-M3
ICode
DCode
System Bus
Bridge
APB
Flash Control
FMA
FMD
FMC
FCRIS
FCIM
FCMISC
Flash Array
SRAM Array
Flash Protection
FMPRE
FMPPE
7.2
7.2.1
Functional Description
This section describes the functionality of both memories.
SRAM Memory
The internal SRAM of the Stellaris devices is located at address 0x20000000 of the device
memory map. To reduce the number of time consuming read-modify-write (RMW) operations,
ARM has introduced bit-banding technology in the new Cortex-M3 processor. With a
bit-band-enabled processor, certain regions in the memory map (SRAM and peripheral space) can
use address aliases to access individual bits in a single, atomic operation.
October 5, 2006
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Preliminary