LM3S2016 Datasheet, PDF (435/468 Pages) List of Unclassifed Manufacturers – Microcontroller

LM3S2016 Microcontroller
19.1.5
Table 19-4. Detailed Power Specifications
Parameter Parameter Name
I_{DD_RUN}
Run mode 1 (Flash
loop)
Conditions
V_DD25 = 2.50 V
Code= while(1){} executed in Flash
3.3 V V_DD, V_DDA,
V_DDPHY
Nom
Max
3
pending^a
2.5 V V_DD25 Unit
Nom Max
108 pending^a mA
Peripherals = All ON
System Clock = 50 MHz (with PLL)
Run mode 2 (Flash V_DD25 = 2.50 V
0
loop)
Code= while(1){} executed in Flash
pending^a 53 pending^a mA
Peripherals = All OFF
System Clock = 50 MHz (with PLL)
Run mode 1 (SRAM V_DD25 = 2.50 V
3
loop)
Code= while(1){} executed in SRAM
pending^a 102 pending^a mA
Peripherals = All ON
System Clock = 50 MHz (with PLL)
Run mode 2 (SRAM V_DD25 = 2.50 V
0
loop)
Code= while(1){} executed in SRAM
pending^a 47 pending^a mA
Peripherals = All OFF
I_{DD_SLEEP} Sleep mode
System Clock = 50 MHz (with PLL)
V_DD25 = 2.50 V
0
pending^a 17 pending^a mA
Peripherals = All OFF
I_{DD_DEEPSLEEP} Deep-Sleep mode
System Clock = 50 MHz (with PLL)
LDO = 2.25 V
Peripherals = All OFF
0.143
pending^a 0.18 pending^a mA
System Clock = IOSC30KHZ/64
a. Pending characterization completion.
Flash Memory Characteristics
Table 19-5. Flash Memory Characteristics
Parameter Parameter Name
Min Nom Max Unit
PE_CYC Number of guaranteed program/erase cycles before failure^a 10,000 100,000 - cycles
T_RET Data retention at average operating temperature of 85˚C
10
-
- years
T_PROG Word program time
20
-
- µs
T_ERASE Page erase time
20
-
- ms
T_ME Mass erase time
200
-
- ms
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
November 30, 2007
435
Preliminary