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| M12L2561616A_1 Datasheet, PDF (34/45 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Synchronous DRAM | |||
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ESMT
Read & Write Cycle at Different Bank @ Burst Length = 4
M12L2561616A
*Note : 1. tCDL should be met to complete write.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2008
Revision: 1.4
34/45
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