M12L2561616A_1 Datasheet, PDF (32/45 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
Page Read Cycle at Different Bank @ Burst Length = 4
M12L2561616A
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2008
Revision: 1.4
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