M12L2561616A_1 Datasheet, PDF (18/45 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
4. CAS Interrupt (II) : Read Interrupted by Write & DQM
( a) CL =2 , B L= 4
CLK
i)CMD
DQM
DQ
ii)CMD
DQM
DQ
iii)CMD
DQM
DQ
iv)CMD
DQM
DQ
RD WR
D0 D1 D2 D3
RD
WR
Hi-Z
D0 D1 D2 D3
RD
WR
Hi-Z
D0 D1 D2 D3
RD
WR
HHi -i -ZZ
Q0
D0 D1 D2 D3
*Note1
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2008
Revision: 1.4
18/45