E981.03 Datasheet, PDF (9/51 Pages) ELMOS Semiconductor AG – Autonomous MAC and individual physical address

KNX/ EIB TRANSCEIVER
PRODUCTION DATA - JAN 15, 2015
E981.03
Electrical Characteristics (continued)
(V_BUSP = 19V … 33V, T_AMB = -25°C … +85°C, unless otherwise noted. Positive currents are flowing into the device pins.
Typical values are at T_AMB = +25°C, unless otherwise noted.)
Description
Condition
Symbol
Min
Typ
Max Unit
Voltage at pin SETVCC for
selection of VCC = 5 V and no
active alarm condition
V_SETVCC,high
0.8
V_V33I
Pull resistance at pin SETVCC to
V33I
R_p33,SETVCC
200
kΩ
Pull resistance at pin SETVCC to
GND
R_p0,SETVCC
200
kΩ
Voltage at pin V33I
Clock System - AC Characteristics
V_V33I
3.22 3.3
3.38 V
Crystal frequency (±50ppm)
CLK_FAC L/H (0x20A
/ 0x20B) = 0xE330
(reset value)
f_Q
7.3728
MHz
Synchronization clock frequency
applied at pin XTAL
no crystal installed
EXTAL is n.c.
f _XTAL,sync
126.537 126.562 126.588 Hz
Host UART Interface - DC Characteristics
Input low voltage at pin RXD
Input high voltage at pin RXD
Pull down current at pin RXD
Low level on TXD pin
High level on TXD pin
Low level on pin BS0
V_RXD = 5 V, V_IO = 5 V
I_TXD = 5 mA, V_IO = 5
I_TXD = 2 mA
I_TXD = -5 mA, V_IO = 5
I_TXD = -2 mA
High level on pin BS0
Pull down current on pin BS0
Low level on pin BS1
V_IO=5 V, V_BS0=5 V
High level on pin BS1
Pull down current on pin BS1
V_IO=5 V, V_BS0=5 V
Host UART Interface - AC Characteristics
V_RXD,low
V_RXD,high
I_RXD,pd
V_TXD,low,5
V_TXD,low,2
V_TXD,high,5
V_TXD,high,2
V_BS0,low
V_BS0,high
I_PD,BS0
V_BS1,low
V_BS1,high
I_PD,BS1
0.8
100
V_IO-0.7 V
V_IO-0.4 V
0.8
30
0.8
30
0.2
V_IO
V_IO
µA
0.7
V
0.4
V
0.2
V_IO
V_IO
µA
0.2
V_IO
V_IO
µA
UART receiver timeout between
subsequent byte of a service
t_UART,IBG,RX
2.5
ms
Baud rate deviation
Host SP Interface - DC Characteristics
Δf_UART
-3%
3%
Input high voltage at pin SCS, SCK,
MOSI, MISO
V_SPI,high
0.8
V_IO
Input low voltage at pin SCS, SCK,
MOSI, MISO
V_SPI,low
0.2
V_IO
Pull down current on pin SCS
V_SCS=5 V, V_IO=5 V
I_PU,SCS
-30
µA
Pull down current on pin SCK
V_SCK=5 V, V_IO=5 V
I_PU,SCK
-30
µA
High output level on MISO, MOSI
pin
I_MISO = -5mA, V_IO= 5V
I_MISO = -2 mA
V_MISO,high,5
V_MISO,high,2
V_IO -0.7V
V_IO-0.4 V
Low output level on MISO, MOSI
pin
I_MISO = 5mA, V_IO= 5V
I_MISO = 2 mA
V_MISO,low,5
V_MISO,low,2
0.7
V
0.4
V
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0046E.03
9/51